Cargando…
HfS(2) thin films deposited at room temperature by an emerging technique, solution atomic layer deposition
As a member of the two-dimensional metal dichalcogenide family, HfS(2) has emerged as a promising material for various optoelectronic applications. Atomic layer deposition is widely used in microelectronics manufacturing with unique properties in terms of accurate thickness control and high conforma...
Autores principales: | Cao, Yuanyuan, Zhu, Sha, Bachmann, Julien |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8477444/ https://www.ncbi.nlm.nih.gov/pubmed/34581330 http://dx.doi.org/10.1039/d1dt01232k |
Ejemplares similares
-
Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films
por: Kundrata, Ivan, et al.
Publicado: (2019) -
Room-temperature bonding of Al(2)O(3) thin films deposited using atomic layer deposition
por: Takakura, Ryo, et al.
Publicado: (2023) -
Few-layer HfS(2) transistors
por: Kanazawa, Toru, et al.
Publicado: (2016) -
Solution Atomic
Layer Deposition of Smooth, Continuous,
Crystalline Metal–Organic Framework Thin Films
por: Barr, Maïssa K. S., et al.
Publicado: (2022) -
Structural, Optical and Electrical Properties of HfO(2) Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition
por: Kim, Kyoung-Mun, et al.
Publicado: (2020)