Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It...

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Detalles Bibliográficos
Autores principales: Kirste, Lutz, Grabianska, Karolina, Kucharski, Robert, Sochacki, Tomasz, Lucznik, Boleslaw, Bockowski, Michal
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8509523/
https://www.ncbi.nlm.nih.gov/pubmed/34639870
http://dx.doi.org/10.3390/ma14195472

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8509523/
https://www.ncbi.nlm.nih.gov/pubmed/34639870
http://dx.doi.org/10.3390/ma14195472

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