Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga(2)O(3)) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al(0.83)In(0.17)N/GaN/Al(0.18)Ga(0.82)N/GaN heterostructured-metal-oxide-semicondu...

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Detalles Bibliográficos
Autores principales: Lee, Hsin-Ying, Liu, Day-Shan, Chyi, Jen-Inn, Chang, Edward Yi, Lee, Ching-Ting
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8509788/
https://www.ncbi.nlm.nih.gov/pubmed/34639872
http://dx.doi.org/10.3390/ma14195474

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8509788/
https://www.ncbi.nlm.nih.gov/pubmed/34639872
http://dx.doi.org/10.3390/ma14195474

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