Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces

Scaling down material synthesis to crystalline structures only few atoms in size and precisely positioned in device configurations remains highly challenging, but is crucial for new applications e.g., in quantum computing. We propose to use the sidewall facets of larger III–V semiconductor nanowires...

Descripción completa

Detalles Bibliográficos
Autores principales: Liu, Yi, Knutsson, Johan V., Wilson, Nathaniel, Young, Elliot, Lehmann, Sebastian, Dick, Kimberly A., Palmstrøm, Chris J., Mikkelsen, Anders, Timm, Rainer
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8514568/
https://www.ncbi.nlm.nih.gov/pubmed/34645829
http://dx.doi.org/10.1038/s41467-021-26148-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8514568/
https://www.ncbi.nlm.nih.gov/pubmed/34645829
http://dx.doi.org/10.1038/s41467-021-26148-4

Ejemplares similares