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Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces
Scaling down material synthesis to crystalline structures only few atoms in size and precisely positioned in device configurations remains highly challenging, but is crucial for new applications e.g., in quantum computing. We propose to use the sidewall facets of larger III–V semiconductor nanowires...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8514568/ https://www.ncbi.nlm.nih.gov/pubmed/34645829 http://dx.doi.org/10.1038/s41467-021-26148-4 |