Graphene–Silicon Device for Visible and Infrared Photodetection

[Image: see text] The fabrication of a graphene–silicon (Gr-Si) junction involves the formation of a parallel metal–insulator–semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene o...

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Detalles Bibliográficos
Autores principales: Pelella, Aniello, Grillo, Alessandro, Faella, Enver, Luongo, Giuseppe, Askari, Mohammad Bagher, Di Bartolomeo, Antonio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8517951/
https://www.ncbi.nlm.nih.gov/pubmed/34581561
http://dx.doi.org/10.1021/acsami.1c12050

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8517951/
https://www.ncbi.nlm.nih.gov/pubmed/34581561
http://dx.doi.org/10.1021/acsami.1c12050

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