Cargando…
Graphene–Silicon Device for Visible and Infrared Photodetection
[Image: see text] The fabrication of a graphene–silicon (Gr-Si) junction involves the formation of a parallel metal–insulator–semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene o...
Autores principales: | Pelella, Aniello, Grillo, Alessandro, Faella, Enver, Luongo, Giuseppe, Askari, Mohammad Bagher, Di Bartolomeo, Antonio |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2021
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8517951/ https://www.ncbi.nlm.nih.gov/pubmed/34581561 http://dx.doi.org/10.1021/acsami.1c12050 |
Ejemplares similares
-
Etch and Print:
Graphene-Based Diodes for Silicon
Technology
por: Grillo, Alessandro, et al.
Publicado: (2022) -
Gold-patched graphene nano-stripes for high-responsivity and ultrafast photodetection from the visible to infrared regime
por: Cakmakyapan, Semih, et al.
Publicado: (2018) -
Graphene Schottky Junction on Pillar Patterned Silicon Substrate
por: Luongo, Giuseppe, et al.
Publicado: (2019) -
Manipulation of the electrical and memory properties of MoS(2) field-effect transistors by highly charged ion irradiation
por: Sleziona, Stephan, et al.
Publicado: (2023) -
Improvement of Visible Photodetection of Chemical Vapor Deposition-Grown MoS(2) Devices via Graphene/Au Contacts
por: Hwa, Yeongsik, et al.
Publicado: (2022)