Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

With a direct bandgap, two-dimensional (2D) ZnSe is a promising semiconductor material in photoelectric device fields. In this work, based on first-principles methods, we theoretically studied the modulation of the Schottky barrier height (SBH) by applying horizontal and vertical strains on graphene...

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Detalles Bibliográficos
Autores principales: Xiao, Wenjun, Liu, Tianyun, Zhang, Yuefei, Zhong, Zhen, Zhang, Xinwei, Luo, Zijiang, Lv, Bing, Zhou, Xun, Zhang, Zhaocai, Liu, Xuefei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8519308/
https://www.ncbi.nlm.nih.gov/pubmed/34660536
http://dx.doi.org/10.3389/fchem.2021.744977

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8519308/
https://www.ncbi.nlm.nih.gov/pubmed/34660536
http://dx.doi.org/10.3389/fchem.2021.744977

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