Fabrication, Characterization, and Modeling of an Aluminum Oxide-Gate Ion-Sensitive Field-Effect Transistor-Based pH Sensor

The ion-sensitive field-effect transistor (ISFET) is a popular technology utilized for pH sensing applications. In this work, we have presented the fabrication, characterization, and electrochemical modeling of an aluminum oxide (Al(2)O(3))-gate ISFET-based pH sensor. The sensor is fabricated using...

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Detalles Bibliográficos
Autores principales: Sinha, Soumendu, Pal, Tapas, Sharma, Prashant, Kharbanda, Dheeraj, Khanna, P. K., Tanwar, Amit, Sharma, Rishi, Mukhiya, Ravindra
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Original Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8522874/
https://www.ncbi.nlm.nih.gov/pubmed/34690411
http://dx.doi.org/10.1007/s11664-021-09220-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8522874/
https://www.ncbi.nlm.nih.gov/pubmed/34690411
http://dx.doi.org/10.1007/s11664-021-09220-z

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