Cargando…
Fabrication, Characterization, and Modeling of an Aluminum Oxide-Gate Ion-Sensitive Field-Effect Transistor-Based pH Sensor
The ion-sensitive field-effect transistor (ISFET) is a popular technology utilized for pH sensing applications. In this work, we have presented the fabrication, characterization, and electrochemical modeling of an aluminum oxide (Al(2)O(3))-gate ISFET-based pH sensor. The sensor is fabricated using...
Autores principales: | Sinha, Soumendu, Pal, Tapas, Sharma, Prashant, Kharbanda, Dheeraj, Khanna, P. K., Tanwar, Amit, Sharma, Rishi, Mukhiya, Ravindra |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8522874/ https://www.ncbi.nlm.nih.gov/pubmed/34690411 http://dx.doi.org/10.1007/s11664-021-09220-z |
Ejemplares similares
-
Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
por: Geiger, Michael, et al.
Publicado: (2021) -
All-Aluminum Thin Film Transistor Fabrication at Room Temperature
por: Yao, Rihui, et al.
Publicado: (2017) -
The insulated gate bipolar transistor IGBT: theory and design
por: Khanna, Vinod Kumar
Publicado: (2003) -
Design and fabrication of high-performance diamond triple-gate field-effect transistors
por: Liu, Jiangwei, et al.
Publicado: (2016) -
A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors
por: Chang, Kow-Ming, et al.
Publicado: (2010)