Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this probl...

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Detalles Bibliográficos
Autores principales: Schuster, Jeffrey, Aberl, Johannes, Vukušić, Lada, Spindlberger, Lukas, Groiss, Heiko, Fromherz, Thomas, Brehm, Moritz, Schäffler, Friedrich
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8523567/
https://www.ncbi.nlm.nih.gov/pubmed/34663889
http://dx.doi.org/10.1038/s41598-021-99966-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8523567/
https://www.ncbi.nlm.nih.gov/pubmed/34663889
http://dx.doi.org/10.1038/s41598-021-99966-7

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