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Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this probl...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8523567/ https://www.ncbi.nlm.nih.gov/pubmed/34663889 http://dx.doi.org/10.1038/s41598-021-99966-7 |