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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg(+) ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface region (≤ 50 nm) was on the order of 10(19) cm(−3). After...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8526815/ https://www.ncbi.nlm.nih.gov/pubmed/34667191 http://dx.doi.org/10.1038/s41598-021-00102-2 |