A new opportunity for the emerging tellurium semiconductor: making resistive switching devices

The development of the resistive switching cross-point array as the next-generation platform for high-density storage, in-memory computing and neuromorphic computing heavily relies on the improvement of the two component devices, volatile selector and nonvolatile memory, which have distinct operatin...

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Detalles Bibliográficos
Autores principales: Yang, Yifei, Xu, Mingkun, Jia, Shujing, Wang, Bolun, Xu, Lujie, Wang, Xinxin, Liu, Huan, Liu, Yuanshuang, Guo, Yuzheng, Wang, Lidan, Duan, Shukai, Liu, Kai, Zhu, Min, Pei, Jing, Duan, Wenrui, Liu, Dameng, Li, Huanglong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8526830/
https://www.ncbi.nlm.nih.gov/pubmed/34667171
http://dx.doi.org/10.1038/s41467-021-26399-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8526830/
https://www.ncbi.nlm.nih.gov/pubmed/34667171
http://dx.doi.org/10.1038/s41467-021-26399-1

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