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Interface Engineering of TiO(2) Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon
[Image: see text] Titanium dioxide (TiO(2)) can protect photoelectrochemical (PEC) devices from corrosion, but the fabrication of high-quality TiO(2) coatings providing long-term stability has remained challenging. Here, we compare the influence of Si wafer cleaning and postdeposition annealing temp...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8529674/ https://www.ncbi.nlm.nih.gov/pubmed/34693171 http://dx.doi.org/10.1021/acsomega.1c04478 |
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author | Saari, Jesse Ali-Löytty, Harri Honkanen, Mari Tukiainen, Antti Lahtonen, Kimmo Valden, Mika |
author_facet | Saari, Jesse Ali-Löytty, Harri Honkanen, Mari Tukiainen, Antti Lahtonen, Kimmo Valden, Mika |
author_sort | Saari, Jesse |
collection | PubMed |
description | [Image: see text] Titanium dioxide (TiO(2)) can protect photoelectrochemical (PEC) devices from corrosion, but the fabrication of high-quality TiO(2) coatings providing long-term stability has remained challenging. Here, we compare the influence of Si wafer cleaning and postdeposition annealing temperature on the performance of TiO(2)/n(+)-Si photoanodes grown by atomic layer deposition (ALD) using tetrakis(dimethylamido)titanium (TDMAT) and H(2)O as precursors at a growth temperature of 100 °C. We show that removal of native Si oxide before ALD does not improve the TiO(2) coating performance under alkaline PEC water splitting conditions if excessive postdeposition annealing is needed to induce crystallization. The as-deposited TiO(2) coatings were amorphous and subject to photocorrosion. However, the TiO(2) coatings were found to be stable over a time period of 10 h after heat treatment at 400 °C that induced crystallization of amorphous TiO(2) into anatase TiO(2). No interfacial Si oxide formed during the ALD growth, but during the heat treatment, the thickness of interfacial Si oxide increased to 1.8 nm for all of the samples. Increasing the ALD growth temperature to 150 °C enabled crystallization at 300 °C, which resulted in reduced growth of interfacial Si oxide followed by a 70 mV improvement in the photocurrent onset potential. |
format | Online Article Text |
id | pubmed-8529674 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-85296742021-10-22 Interface Engineering of TiO(2) Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon Saari, Jesse Ali-Löytty, Harri Honkanen, Mari Tukiainen, Antti Lahtonen, Kimmo Valden, Mika ACS Omega [Image: see text] Titanium dioxide (TiO(2)) can protect photoelectrochemical (PEC) devices from corrosion, but the fabrication of high-quality TiO(2) coatings providing long-term stability has remained challenging. Here, we compare the influence of Si wafer cleaning and postdeposition annealing temperature on the performance of TiO(2)/n(+)-Si photoanodes grown by atomic layer deposition (ALD) using tetrakis(dimethylamido)titanium (TDMAT) and H(2)O as precursors at a growth temperature of 100 °C. We show that removal of native Si oxide before ALD does not improve the TiO(2) coating performance under alkaline PEC water splitting conditions if excessive postdeposition annealing is needed to induce crystallization. The as-deposited TiO(2) coatings were amorphous and subject to photocorrosion. However, the TiO(2) coatings were found to be stable over a time period of 10 h after heat treatment at 400 °C that induced crystallization of amorphous TiO(2) into anatase TiO(2). No interfacial Si oxide formed during the ALD growth, but during the heat treatment, the thickness of interfacial Si oxide increased to 1.8 nm for all of the samples. Increasing the ALD growth temperature to 150 °C enabled crystallization at 300 °C, which resulted in reduced growth of interfacial Si oxide followed by a 70 mV improvement in the photocurrent onset potential. American Chemical Society 2021-10-07 /pmc/articles/PMC8529674/ /pubmed/34693171 http://dx.doi.org/10.1021/acsomega.1c04478 Text en © 2021 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Saari, Jesse Ali-Löytty, Harri Honkanen, Mari Tukiainen, Antti Lahtonen, Kimmo Valden, Mika Interface Engineering of TiO(2) Photoelectrode Coatings Grown by Atomic Layer Deposition on Silicon |
title | Interface Engineering of TiO(2) Photoelectrode
Coatings Grown by Atomic Layer Deposition on Silicon |
title_full | Interface Engineering of TiO(2) Photoelectrode
Coatings Grown by Atomic Layer Deposition on Silicon |
title_fullStr | Interface Engineering of TiO(2) Photoelectrode
Coatings Grown by Atomic Layer Deposition on Silicon |
title_full_unstemmed | Interface Engineering of TiO(2) Photoelectrode
Coatings Grown by Atomic Layer Deposition on Silicon |
title_short | Interface Engineering of TiO(2) Photoelectrode
Coatings Grown by Atomic Layer Deposition on Silicon |
title_sort | interface engineering of tio(2) photoelectrode
coatings grown by atomic layer deposition on silicon |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8529674/ https://www.ncbi.nlm.nih.gov/pubmed/34693171 http://dx.doi.org/10.1021/acsomega.1c04478 |
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