Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resul...

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Detalles Bibliográficos
Autores principales: Babin, Hans Georg, Ritzmann, Julian, Bart, Nikolai, Schmidt, Marcel, Kruck, Timo, Zhai, Liang, Löbl, Matthias C., Nguyen, Giang N., Spinnler, Clemens, Ranasinghe, Leonardo, Warburton, Richard J., Heyn, Christian, Wieck, Andreas D., Ludwig, Arne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537184/
https://www.ncbi.nlm.nih.gov/pubmed/34685139
http://dx.doi.org/10.3390/nano11102703

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8537184/
https://www.ncbi.nlm.nih.gov/pubmed/34685139
http://dx.doi.org/10.3390/nano11102703

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