Effect of Oxygen Vacancy on the Conduction Modulation Linearity and Classification Accuracy of Pr(0.7)Ca(0.3)MnO(3) Memristor

An amorphous Pr(0.7)Ca(0.3)MnO(3) (PCMO) film was grown on a TiN/SiO(2)/Si (TiN–Si) substrate at 300 °C and at an oxygen pressure (OP) of 100 mTorr. This PCMO memristor showed typical bipolar switching characteristics, which were attributed to the generation and disruption of oxygen vacancy (OV) fil...

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Detalles Bibliográficos
Autores principales: Pyo, Yeon, Woo, Jong-Un, Hwang, Hyun-Gyu, Nahm, Sahn, Jeong, Jichai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538184/
https://www.ncbi.nlm.nih.gov/pubmed/34685125
http://dx.doi.org/10.3390/nano11102684

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538184/
https://www.ncbi.nlm.nih.gov/pubmed/34685125
http://dx.doi.org/10.3390/nano11102684

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