Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current I(inv) increments from 1 × 10(−7) A at 80 K to about 1 × 10(−5) A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01...

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Detalles Bibliográficos
Autores principales: Helal, Hicham, Benamara, Zineb, Wederni, Mouhamed Amine, Mourad, Sabrine, Khirouni, Kamel, Monier, Guillaume, Robert-Goumet, Christine, Rabehi, Abdelaziz, Hatem Kacha, Arslane, Bakkali, Hicham, Gontard, Lionel C., Dominguez, Manuel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538685/
https://www.ncbi.nlm.nih.gov/pubmed/34683502
http://dx.doi.org/10.3390/ma14205909

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538685/
https://www.ncbi.nlm.nih.gov/pubmed/34683502
http://dx.doi.org/10.3390/ma14205909

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