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Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range
Au/0.8 nm–GaN/n–GaAs Schottky diodes were manufactured and electrically characterized over a wide temperature range. As a result, the reverse current I(inv) increments from 1 × 10(−7) A at 80 K to about 1 × 10(−5) A at 420 K. The ideality factor n shows low values, decreasing from 2 at 80 K to 1.01...
| Autores principales: | , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538685/ https://www.ncbi.nlm.nih.gov/pubmed/34683502 http://dx.doi.org/10.3390/ma14205909 |