A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and analytical approach simultaneously. By introducing e...

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Detalles Bibliográficos
Autores principales: Liu, Jianhua, Guo, Yufeng, Zhang, Jun, Yao, Jiafei, Li, Man, Zhang, Maolin, Chen, Jing, Huang, Xiaoming, Huang, Chenyang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538879/
https://www.ncbi.nlm.nih.gov/pubmed/34683299
http://dx.doi.org/10.3390/mi12101244

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8538879/
https://www.ncbi.nlm.nih.gov/pubmed/34683299
http://dx.doi.org/10.3390/mi12101244

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