A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

The AlGaN/GaN high electron mobility transistor with a step–doped channel (SDC–HEMT) is first proposed in this paper. The potential distribution and the electric field (E–field) distribution of the device are explored by the numerical approach and analytical approach simultaneously. By introducing extra dopants to the channel layer, the E–field distribution along the AlGaN/GaN heterojunction interface is reshaped, resulting in an improved breakdown characteristic. An optimized doping concentration gradient of channel layer of 2 × 10(16) cm(−3)/step is proposed and verified by simulations. The breakdown voltage (BV) of the optimized SDC–HEMT reaches 1486 V with a 59.8% improvement compared with conventional AlGaN/GaN HEMT. In addition, the average E–field in the region between gate and drain improves from 1.5 to 2.5 MV/cm. Based on the equivalent potential method (EPM), an analytical model of the E–field and potential distribution is presented. The veracity and effectiveness of the proposed methodology is verified by the good agreement between the simulated and modeled results.