Review of Si-Based GeSn CVD Growth and Optoelectronic Applications

GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applica...

Descripción completa

Detalles Bibliográficos
Autores principales: Miao, Yuanhao, Wang, Guilei, Kong, Zhenzhen, Xu, Buqing, Zhao, Xuewei, Luo, Xue, Lin, Hongxiao, Dong, Yan, Lu, Bin, Dong, Linpeng, Zhou, Jiuren, Liu, Jinbiao, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8539235/
https://www.ncbi.nlm.nih.gov/pubmed/34684996
http://dx.doi.org/10.3390/nano11102556

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8539235/
https://www.ncbi.nlm.nih.gov/pubmed/34684996
http://dx.doi.org/10.3390/nano11102556

Ejemplares similares