Investigation of Electrical Properties of the Al/SiO(2)/n(++)-Si Resistive Switching Structures by Means of Static, Admittance, and Impedance Spectroscopy Measurements

In this study, the resistive switching phenomenon in Al/SiO2/n(++)-Si structures is observed and studied by means of DC, small-signal admittance, and complex impedance spectroscopy measurements. Possible transport mechanisms in the high and low resistance states are identified. Based on the results...

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Detalles Bibliográficos
Autores principales: Wiśniewski, Piotr, Jasiński, Jakub, Mazurak, Andrzej, Stonio, Bartłomiej, Majkusiak, Bogdan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540043/
https://www.ncbi.nlm.nih.gov/pubmed/34683629
http://dx.doi.org/10.3390/ma14206042

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540043/
https://www.ncbi.nlm.nih.gov/pubmed/34683629
http://dx.doi.org/10.3390/ma14206042

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