Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)

We report the results from self-consistent calculations of electronic, transport, and bulk properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). We obtained the groun...

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Detalles Bibliográficos
Autores principales: Ayirizia, Blaise A., Brumfield, Janee’ S., Malozovsky, Yuriy, Bagayoko, Diola
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540841/
https://www.ncbi.nlm.nih.gov/pubmed/34683717
http://dx.doi.org/10.3390/ma14206128

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540841/
https://www.ncbi.nlm.nih.gov/pubmed/34683717
http://dx.doi.org/10.3390/ma14206128

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