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Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)
We report the results from self-consistent calculations of electronic, transport, and bulk properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). We obtained the groun...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8540841/ https://www.ncbi.nlm.nih.gov/pubmed/34683717 http://dx.doi.org/10.3390/ma14206128 |