Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al(2)O(3)/AlN Composite Gate Insulator

A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al(2)O(3)/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposition–grown AlN, an...

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Detalles Bibliográficos
Autores principales: Chiu, Hsien-Chin, Liu, Chia-Hao, Huang, Chong-Rong, Chiu, Chi-Chuan, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Lin, Shinn-Yn, Chien, Feng-Tso
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541110/
https://www.ncbi.nlm.nih.gov/pubmed/34677492
http://dx.doi.org/10.3390/membranes11100727

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541110/
https://www.ncbi.nlm.nih.gov/pubmed/34677492
http://dx.doi.org/10.3390/membranes11100727

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