Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf(1−x)Zr(x)O(2) Diodes

Ferroelectric (FE) Hf(1−x)Zr(x)O(2) is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antifer...

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Detalles Bibliográficos
Autores principales: Hsiang, Kuo-Yu, Liao, Chun-Yu, Wang, Jer-Fu, Lou, Zhao-Feng, Lin, Chen-Ying, Chiang, Shih-Hung, Liu, Chee-Wee, Hou, Tuo-Hung, Lee, Min-Hung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541604/
https://www.ncbi.nlm.nih.gov/pubmed/34685126
http://dx.doi.org/10.3390/nano11102685

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541604/
https://www.ncbi.nlm.nih.gov/pubmed/34685126
http://dx.doi.org/10.3390/nano11102685

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