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Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf(1−x)Zr(x)O(2) Diodes
Ferroelectric (FE) Hf(1−x)Zr(x)O(2) is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antifer...
Autores principales: | Hsiang, Kuo-Yu, Liao, Chun-Yu, Wang, Jer-Fu, Lou, Zhao-Feng, Lin, Chen-Ying, Chiang, Shih-Hung, Liu, Chee-Wee, Hou, Tuo-Hung, Lee, Min-Hung |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8541604/ https://www.ncbi.nlm.nih.gov/pubmed/34685126 http://dx.doi.org/10.3390/nano11102685 |
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