Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

Ultrathin two-dimensional (2D) semiconductors are regarded as a potential channel material for low-power transistors with small subthreshold swing and low leakage current. However, their dangling bond–free surface makes it extremely difficult to deposit gate dielectrics with high-quality interface i...

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Detalles Bibliográficos
Autores principales: Wang, Jingli, Cai, Lejuan, Chen, Jiewei, Guo, Xuyun, Liu, Yuting, Ma, Zichao, Xie, Zhengdao, Huang, Hao, Chan, Mansun, Zhu, Ye, Liao, Lei, Shao, Qiming, Chai, Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8550226/
https://www.ncbi.nlm.nih.gov/pubmed/34705513
http://dx.doi.org/10.1126/sciadv.abf8744

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8550226/
https://www.ncbi.nlm.nih.gov/pubmed/34705513
http://dx.doi.org/10.1126/sciadv.abf8744

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