Low-energy Ar(+) and N(+) ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films

We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar(...

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Detalles Bibliográficos
Autores principales: Yoshimura, Satoru, Sugimoto, Satoshi, Takeuchi, Takae, Murai, Kensuke, Kiuchi, Masato
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Public Library of Science 2021
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8550407/
https://www.ncbi.nlm.nih.gov/pubmed/34705881
http://dx.doi.org/10.1371/journal.pone.0259216

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8550407/
https://www.ncbi.nlm.nih.gov/pubmed/34705881
http://dx.doi.org/10.1371/journal.pone.0259216

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