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Low-energy Ar(+) and N(+) ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films
We proposed an experimental methodology for producing films on substrates with an ion beam induced chemical vapor deposition (IBICVD) method using hexamethyldisilazane (HMDS) as a source material. In this study, both HMDS and ion beam were simultaneously injected onto a Si substrate. We selected Ar(...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Public Library of Science
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8550407/ https://www.ncbi.nlm.nih.gov/pubmed/34705881 http://dx.doi.org/10.1371/journal.pone.0259216 |