PO(x)/Al(2)O(3) Stacks for c-Si Surface Passivation: Material and Interface Properties

[Image: see text] Phosphorus oxide (PO(x)) capped by aluminum oxide (Al(2)O(3)) has recently been discovered to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into the passivation mechanism of PO(x)/Al(2)O(3) stacks are gained through a systematic study o...

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Detalles Bibliográficos
Autores principales: Theeuwes, Roel J., Melskens, Jimmy, Black, Lachlan E., Beyer, Wolfhard, Koushik, Dibyashree, Berghuis, Wilhelmus J. H., Macco, Bart, Kessels, Wilhelmus M. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8552444/
https://www.ncbi.nlm.nih.gov/pubmed/34723186
http://dx.doi.org/10.1021/acsaelm.1c00516

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8552444/
https://www.ncbi.nlm.nih.gov/pubmed/34723186
http://dx.doi.org/10.1021/acsaelm.1c00516

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