Plasmon-induced trap filling at grain boundaries in perovskite solar cells

The deep-level traps induced by charged defects at the grain boundaries (GBs) of polycrystalline organic–inorganic halide perovskite (OIHP) films serve as major recombination centres, which limit the device performance. Herein, we incorporate specially designed poly(3-aminothiophenol)-coated gold (A...

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Detalles Bibliográficos
Autores principales: Yao, Kai, Li, Siqi, Liu, Zhiliang, Ying, Yiran, Dvořák, Petr, Fei, Linfeng, Šikola, Tomáš, Huang, Haitao, Nordlander, Peter, Jen, Alex K.-Y., Lei, Dangyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8553803/
https://www.ncbi.nlm.nih.gov/pubmed/34711799
http://dx.doi.org/10.1038/s41377-021-00662-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8553803/
https://www.ncbi.nlm.nih.gov/pubmed/34711799
http://dx.doi.org/10.1038/s41377-021-00662-y

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