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The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H(2)/NH(3) Mixed Gas for Improving Structural and Optical Properties

In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H(2)/NH(3) gas mixture was introduced during the interruption after the growth of In...

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Detalles Bibliográficos
Autores principales: Ben, Yuhao, Liang, Feng, Zhao, Degang, Yang, Jing, Liu, Zongshun, Chen, Ping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8563876/
https://www.ncbi.nlm.nih.gov/pubmed/34727236
http://dx.doi.org/10.1186/s11671-021-03618-8