Cargando…
The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H(2)/NH(3) Mixed Gas for Improving Structural and Optical Properties
In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H(2)/NH(3) gas mixture was introduced during the interruption after the growth of In...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8563876/ https://www.ncbi.nlm.nih.gov/pubmed/34727236 http://dx.doi.org/10.1186/s11671-021-03618-8 |