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Stability and molecular pathways to the formation of spin defects in silicon carbide

Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect fo...

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Detalles Bibliográficos
Autores principales: Lee, Elizabeth M. Y., Yu, Alvin, de Pablo, Juan J., Galli, Giulia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8566517/
https://www.ncbi.nlm.nih.gov/pubmed/34732705
http://dx.doi.org/10.1038/s41467-021-26419-0