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Gate induced quantum wires in GaAs/AlGaAs heterostructures by cleaved edge deposition
Electric conductors with dimensions reduced to the nanometer scale are the prerequisite of the quantum devices upon which the future advanced electronics is expected to be based. In the past, the fabrication of one-dimensional (1D) wires has been a particular challenge because they have to be defect...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8571278/ https://www.ncbi.nlm.nih.gov/pubmed/34741080 http://dx.doi.org/10.1038/s41598-021-01130-8 |