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Statistical Analysis of Uniform Switching Characteristics of Ta(2)O(5)-Based Memristors by Embedding In-Situ Grown 2D-MoS(2) Buffer Layers
A memristor based on emerging resistive random-access memory (RRAM) is a promising candidate for use as a next-generation neuromorphic computing device which overcomes the von Neumann bottleneck. Meanwhile, due to their unique properties, including atomically thin layers and surface smoothness, two-...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8584643/ https://www.ncbi.nlm.nih.gov/pubmed/34771802 http://dx.doi.org/10.3390/ma14216275 |