Boron-Doped Diamond/GaN Heterojunction—The Influence of the Low-Temperature Deposition

We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via the molecular-beam epitaxy process. To obtain a con...

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Detalles Bibliográficos
Autores principales: Sobaszek, Michał, Gnyba, Marcin, Kulesza, Sławomir, Bramowicz, Mirosław, Klimczuk, Tomasz, Bogdanowicz, Robert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8585340/
https://www.ncbi.nlm.nih.gov/pubmed/34771852
http://dx.doi.org/10.3390/ma14216328

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8585340/
https://www.ncbi.nlm.nih.gov/pubmed/34771852
http://dx.doi.org/10.3390/ma14216328

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