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Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri(2) Perovskite
In this study, the CsPbBrI(2) perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br(+) into the CsPbI(3) film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBr...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8585410/ https://www.ncbi.nlm.nih.gov/pubmed/34772157 http://dx.doi.org/10.3390/ma14216629 |