Resistance Switching Effect of Memory Device Based on All-Inorganic Cspbbri(2) Perovskite

In this study, the CsPbBrI(2) perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br(+) into the CsPbI(3) film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI(2) perovskite film, the Ag/CsPbBrI(2)/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI(2)/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI(2) perovskite film is uniform and dense, and the Ag/CsPbBrI(2)/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI(2)/ITO memory devices based on CsPbBrI(2) perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI(2) film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.