Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

[Image: see text] III–V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the...

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Detalles Bibliográficos
Autores principales: Holmér, Jonatan, Zeng, Lunjie, Kanne, Thomas, Krogstrup, Peter, Nygård, Jesper, Olsson, Eva
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8587900/
https://www.ncbi.nlm.nih.gov/pubmed/34704766
http://dx.doi.org/10.1021/acs.nanolett.1c02468

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8587900/
https://www.ncbi.nlm.nih.gov/pubmed/34704766
http://dx.doi.org/10.1021/acs.nanolett.1c02468

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