Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternati...

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Detalles Bibliográficos
Autores principales: Lederer, Maximilian, Abdulazhanov, Sukhrob, Olivo, Ricardo, Lehninger, David, Kämpfe, Thomas, Seidel, Konrad, Eng, Lukas M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/
https://www.ncbi.nlm.nih.gov/pubmed/34782687
http://dx.doi.org/10.1038/s41598-021-01724-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/
https://www.ncbi.nlm.nih.gov/pubmed/34782687
http://dx.doi.org/10.1038/s41598-021-01724-2

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