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Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternati...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/ https://www.ncbi.nlm.nih.gov/pubmed/34782687 http://dx.doi.org/10.1038/s41598-021-01724-2 |
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author | Lederer, Maximilian Abdulazhanov, Sukhrob Olivo, Ricardo Lehninger, David Kämpfe, Thomas Seidel, Konrad Eng, Lukas M. |
author_facet | Lederer, Maximilian Abdulazhanov, Sukhrob Olivo, Ricardo Lehninger, David Kämpfe, Thomas Seidel, Konrad Eng, Lukas M. |
author_sort | Lederer, Maximilian |
collection | PubMed |
description | Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P[Formula: see text] = 47 [Formula: see text] C/cm[Formula: see text] is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention. |
format | Online Article Text |
id | pubmed-8594776 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-85947762021-11-17 Electric field-induced crystallization of ferroelectric hafnium zirconium oxide Lederer, Maximilian Abdulazhanov, Sukhrob Olivo, Ricardo Lehninger, David Kämpfe, Thomas Seidel, Konrad Eng, Lukas M. Sci Rep Article Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P[Formula: see text] = 47 [Formula: see text] C/cm[Formula: see text] is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention. Nature Publishing Group UK 2021-11-15 /pmc/articles/PMC8594776/ /pubmed/34782687 http://dx.doi.org/10.1038/s41598-021-01724-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Lederer, Maximilian Abdulazhanov, Sukhrob Olivo, Ricardo Lehninger, David Kämpfe, Thomas Seidel, Konrad Eng, Lukas M. Electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
title | Electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
title_full | Electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
title_fullStr | Electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
title_full_unstemmed | Electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
title_short | Electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
title_sort | electric field-induced crystallization of ferroelectric hafnium zirconium oxide |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/ https://www.ncbi.nlm.nih.gov/pubmed/34782687 http://dx.doi.org/10.1038/s41598-021-01724-2 |
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