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Electric field-induced crystallization of ferroelectric hafnium zirconium oxide

Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternati...

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Autores principales: Lederer, Maximilian, Abdulazhanov, Sukhrob, Olivo, Ricardo, Lehninger, David, Kämpfe, Thomas, Seidel, Konrad, Eng, Lukas M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/
https://www.ncbi.nlm.nih.gov/pubmed/34782687
http://dx.doi.org/10.1038/s41598-021-01724-2
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author Lederer, Maximilian
Abdulazhanov, Sukhrob
Olivo, Ricardo
Lehninger, David
Kämpfe, Thomas
Seidel, Konrad
Eng, Lukas M.
author_facet Lederer, Maximilian
Abdulazhanov, Sukhrob
Olivo, Ricardo
Lehninger, David
Kämpfe, Thomas
Seidel, Konrad
Eng, Lukas M.
author_sort Lederer, Maximilian
collection PubMed
description Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P[Formula: see text]  = 47 [Formula: see text] C/cm[Formula: see text] is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention.
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spelling pubmed-85947762021-11-17 Electric field-induced crystallization of ferroelectric hafnium zirconium oxide Lederer, Maximilian Abdulazhanov, Sukhrob Olivo, Ricardo Lehninger, David Kämpfe, Thomas Seidel, Konrad Eng, Lukas M. Sci Rep Article Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P[Formula: see text]  = 47 [Formula: see text] C/cm[Formula: see text] is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention. Nature Publishing Group UK 2021-11-15 /pmc/articles/PMC8594776/ /pubmed/34782687 http://dx.doi.org/10.1038/s41598-021-01724-2 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Lederer, Maximilian
Abdulazhanov, Sukhrob
Olivo, Ricardo
Lehninger, David
Kämpfe, Thomas
Seidel, Konrad
Eng, Lukas M.
Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_full Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_fullStr Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_full_unstemmed Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_short Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
title_sort electric field-induced crystallization of ferroelectric hafnium zirconium oxide
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/
https://www.ncbi.nlm.nih.gov/pubmed/34782687
http://dx.doi.org/10.1038/s41598-021-01724-2
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