Cargando…
Electric field-induced crystallization of ferroelectric hafnium zirconium oxide
Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternati...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8594776/ https://www.ncbi.nlm.nih.gov/pubmed/34782687 http://dx.doi.org/10.1038/s41598-021-01724-2 |