A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors

The characteristics of traps between the Al(0.25)Ga(0.75)N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al(0.25)Ga(0.75)N/GaN interface as well as the border traps were experimentally analyzed because the Al(0.25)Ga(0...

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Detalles Bibliográficos
Autores principales: Amir, Walid, Shin, Ju-Won, Shin, Ki-Yong, Kim, Jae-Moo, Cho, Chu-Young, Park, Kyung-Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8599491/
https://www.ncbi.nlm.nih.gov/pubmed/34789786
http://dx.doi.org/10.1038/s41598-021-01768-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8599491/
https://www.ncbi.nlm.nih.gov/pubmed/34789786
http://dx.doi.org/10.1038/s41598-021-01768-4

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