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Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8602599/ https://www.ncbi.nlm.nih.gov/pubmed/34792678 http://dx.doi.org/10.1186/s11671-021-03623-x |
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author | Yeh, Yen-Wei Lin, Su-Hui Hsu, Tsung-Chi Lai, Shouqiang Lee, Po-Tsung Lien, Shui-Yang Wuu, Dong-Sing Li, Guisen Chen, Zhong Wu, Tingzhu Kuo, Hao-Chung |
author_facet | Yeh, Yen-Wei Lin, Su-Hui Hsu, Tsung-Chi Lai, Shouqiang Lee, Po-Tsung Lien, Shui-Yang Wuu, Dong-Sing Li, Guisen Chen, Zhong Wu, Tingzhu Kuo, Hao-Chung |
author_sort | Yeh, Yen-Wei |
collection | PubMed |
description | In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability. |
format | Online Article Text |
id | pubmed-8602599 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-86025992021-12-02 Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs Yeh, Yen-Wei Lin, Su-Hui Hsu, Tsung-Chi Lai, Shouqiang Lee, Po-Tsung Lien, Shui-Yang Wuu, Dong-Sing Li, Guisen Chen, Zhong Wu, Tingzhu Kuo, Hao-Chung Nanoscale Res Lett Nano Review In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability. Springer US 2021-11-18 /pmc/articles/PMC8602599/ /pubmed/34792678 http://dx.doi.org/10.1186/s11671-021-03623-x Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Nano Review Yeh, Yen-Wei Lin, Su-Hui Hsu, Tsung-Chi Lai, Shouqiang Lee, Po-Tsung Lien, Shui-Yang Wuu, Dong-Sing Li, Guisen Chen, Zhong Wu, Tingzhu Kuo, Hao-Chung Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
title | Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
title_full | Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
title_fullStr | Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
title_full_unstemmed | Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
title_short | Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs |
title_sort | advanced atomic layer deposition technologies for micro-leds and vcsels |
topic | Nano Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8602599/ https://www.ncbi.nlm.nih.gov/pubmed/34792678 http://dx.doi.org/10.1186/s11671-021-03623-x |
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