In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desir...

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Detalles Bibliográficos
Autores principales: Lee, J. W., Eom, K., Paudel, T. R., Wang, B., Lu, H., Huyan, H. X., Lindemann, S., Ryu, S., Lee, H., Kim, T. H., Yuan, Y., Zorn, J. A., Lei, S., Gao, W. P., Tybell, T., Gopalan, V., Pan, X. Q., Gruverman, A., Chen, L. Q., Tsymbal, E. Y., Eom, C. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8608839/
https://www.ncbi.nlm.nih.gov/pubmed/34811372
http://dx.doi.org/10.1038/s41467-021-26660-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8608839/
https://www.ncbi.nlm.nih.gov/pubmed/34811372
http://dx.doi.org/10.1038/s41467-021-26660-7

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