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In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desir...

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Autores principales: Lee, J. W., Eom, K., Paudel, T. R., Wang, B., Lu, H., Huyan, H. X., Lindemann, S., Ryu, S., Lee, H., Kim, T. H., Yuan, Y., Zorn, J. A., Lei, S., Gao, W. P., Tybell, T., Gopalan, V., Pan, X. Q., Gruverman, A., Chen, L. Q., Tsymbal, E. Y., Eom, C. B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8608839/
https://www.ncbi.nlm.nih.gov/pubmed/34811372
http://dx.doi.org/10.1038/s41467-021-26660-7
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author Lee, J. W.
Eom, K.
Paudel, T. R.
Wang, B.
Lu, H.
Huyan, H. X.
Lindemann, S.
Ryu, S.
Lee, H.
Kim, T. H.
Yuan, Y.
Zorn, J. A.
Lei, S.
Gao, W. P.
Tybell, T.
Gopalan, V.
Pan, X. Q.
Gruverman, A.
Chen, L. Q.
Tsymbal, E. Y.
Eom, C. B.
author_facet Lee, J. W.
Eom, K.
Paudel, T. R.
Wang, B.
Lu, H.
Huyan, H. X.
Lindemann, S.
Ryu, S.
Lee, H.
Kim, T. H.
Yuan, Y.
Zorn, J. A.
Lei, S.
Gao, W. P.
Tybell, T.
Gopalan, V.
Pan, X. Q.
Gruverman, A.
Chen, L. Q.
Tsymbal, E. Y.
Eom, C. B.
author_sort Lee, J. W.
collection PubMed
description The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO(3) thin films. Theoretical calculations predict the key role of the BaTiO(3)/PrScO(3) [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
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spelling pubmed-86088392021-12-03 In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering Lee, J. W. Eom, K. Paudel, T. R. Wang, B. Lu, H. Huyan, H. X. Lindemann, S. Ryu, S. Lee, H. Kim, T. H. Yuan, Y. Zorn, J. A. Lei, S. Gao, W. P. Tybell, T. Gopalan, V. Pan, X. Q. Gruverman, A. Chen, L. Q. Tsymbal, E. Y. Eom, C. B. Nat Commun Article The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO(3) thin films. Theoretical calculations predict the key role of the BaTiO(3)/PrScO(3) [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices. Nature Publishing Group UK 2021-11-22 /pmc/articles/PMC8608839/ /pubmed/34811372 http://dx.doi.org/10.1038/s41467-021-26660-7 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Lee, J. W.
Eom, K.
Paudel, T. R.
Wang, B.
Lu, H.
Huyan, H. X.
Lindemann, S.
Ryu, S.
Lee, H.
Kim, T. H.
Yuan, Y.
Zorn, J. A.
Lei, S.
Gao, W. P.
Tybell, T.
Gopalan, V.
Pan, X. Q.
Gruverman, A.
Chen, L. Q.
Tsymbal, E. Y.
Eom, C. B.
In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering
title In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering
title_full In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering
title_fullStr In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering
title_full_unstemmed In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering
title_short In-plane quasi-single-domain BaTiO(3) via interfacial symmetry engineering
title_sort in-plane quasi-single-domain batio(3) via interfacial symmetry engineering
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8608839/
https://www.ncbi.nlm.nih.gov/pubmed/34811372
http://dx.doi.org/10.1038/s41467-021-26660-7
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