Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films

[Image: see text] Epitaxial thin films of HfO(2) doped with La have been grown on SrTiO(3)(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic...

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Detalles Bibliográficos
Autores principales: Song, Tingfeng, Tan, Huan, Bachelet, Romain, Saint-Girons, Guillaume, Fina, Ignasi, Sánchez, Florencio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8613842/
https://www.ncbi.nlm.nih.gov/pubmed/34841249
http://dx.doi.org/10.1021/acsaelm.1c00672

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8613842/
https://www.ncbi.nlm.nih.gov/pubmed/34841249
http://dx.doi.org/10.1021/acsaelm.1c00672

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